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Results 1-10 of 30 (Search time: 0.008 seconds).
In-situ SiNx 막을 이용한 AlGaN/GaN 전력소자의 동적특성 개선
차호영
Article
Issue Date
2015
Citation
제2회 LED,반도체조명학회/한국광전자학회 학술대회 proceeding, v.1, no.1, pp.99 - 99
Publisher
LED,반도체조명학회/한국광전자학회
Low-temperature Au-free Ohmic Contact for AlGaN/GaN Heterostructure
차호영
Article
Issue Date
2015
Citation
APWS proceeding, v.1, no.1, pp.2 - 2
Publisher
APWS
Monolithic Intergration of AlGaN/GaN Switching FETs and Diodes
차호영
Article
Issue Date
2015
Citation
APWS proceeding, v.1, no.1, pp.1 - 1
Publisher
APWS
High-Quality PECVD SiO2 Gate Oxide for Use in Normally-off AlGaN/GaN Recessed MOS-HFETs
차호영
Article
Issue Date
2015
Citation
SSDM proceeding, v.1, no.1, pp.32 - 32
Publisher
SSDM
Low Current Collapsed AlGaN/GaN HEMT-on-Si Substrate with SiNx/HfO2 Dual Passivation Layer
차호영
Article
Issue Date
2015
Citation
SSDM proceeding, v.1, no.1, pp.32 - 32
Publisher
SSDM
Low-temperature Au-free Fabrication of Normally-off AlGaN/GaN-on-Si Recessed MOS-HFETs
차호영
Article
Issue Date
2015
Citation
제2회 LED,반도체조명학회/한국광전자학회 학술대회 proceeding, v.1, no.1, pp.99 - 99
Publisher
제2회 LED,반도체조명학회/한국광전자학회
Normally-off Operation of AlGaN/GaN-on-Si Metal-Oxide-Semiconductor-Heterojunction Field-Effect Transistor Using Clamped Gate Voltage
차호영
Article
Issue Date
2015
Citation
ICNS proceeding, v.1, no.1, pp.101 - 101
Publisher
ICNS
Influence of Post-Metallization Annealing on Threshold Voltage Characteristics of Normally-off Recessed AlGaN/GaN-on-Si HEMTs with SiNx Gate Dielectric
차호영
Article
Issue Date
2015
Citation
ICNS proceeding, v.1, no.1, pp.120 - 120
Publisher
ICNS
High-Quality PECVD SiO2 for Normally-off AlGaN/GaN-on-Si Recessed MOS-HFET
차호영
Article
Issue Date
2015
Citation
ICNS proceeding, v.1, no.1, pp.130 - 130
Publisher
ICNS
Effect of p-GaN Back Barrier in 2DEG of AlGaN/GaN HEMTs on SiC Substrate
차호영
Article
Issue Date
2015
Citation
제23회 한국반도체학술대회 proceeding, v.1, no.1, pp.107 - 107
Publisher
한국반도체학술대회
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Author
Kim, Hyung tak
3
Lim, Jong tae
2
Cho, Chun Hyung
1
Kim, CHUNG KYUN
1
Kim, Jong Sun
1
Subject
GaN
2
HEMTS
2
interface trap density
2
normally-off
2
STATES
2
AlGaN/GaN
1
AlGaN/GaN heterostructure
1
AlGaN/GaN HFETs
1
AlGaN/GaN-on-Si
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Au-free
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Language
English
27
Korean
2
Journal
제23회 한국반도체학술대회 proceeding
6
JOURNAL OF SEMICONDUCTOR TECHNOLO...
4
ICNS proceeding
3
SSDM proceeding
3
APWS proceeding
2
AWAD proceeding
2
IEEE Electron Device Letters
2
Semiconductor Science and Technology
2
제2회 LED,반도체조명학회/한국광전자학회 학술대회 proc...
2
Applied Physics Express
1
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