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Results 1-10 of 11 (Search time: 0.109 seconds).
Ga2O3 Schottky Barrier Diode with Floating Metal Fuard Rings
차호영
Article
Issue Date
2019
Citation
학회논문지, v.0, no.0, pp.0 - 0
Publisher
IEIE
고민감 초고속 반응속도 선능의 AlGaN/GaN 이종접합 트랜지스터 수고가스센서 연구
차호영
Article
Issue Date
2018
Citation
학회논문지, v.1, no.1, pp.1 - 11
Publisher
학회
Improved Vth Stability of Recessed-Gate AlGaN/GaN-on-Si MOS-HFETs Using Cyclic Nitrogen Incoporation into Al2O3 Gate Insulator
차호영
Article
Issue Date
2018
Citation
학회논문지, v.1, no.1, pp.1 - 11
Publisher
학회
Electrical Properties of Normally-off AlGaN/GaN-on-Si Recessed MIS-FETs Using PECVD SiON as Gate Dielectric
차호영
Article
Issue Date
2018
Citation
학회논문지, v.1, no.1, pp.1 - 11
Publisher
학회
Suppression of Electric Field at the Junction Sidewall of GaN PIN Avalanche Photodiode with Double-step MESA
차호영
Article
Issue Date
2018
Citation
학회논문지, v.1, no.1, pp.1 - 11
Publisher
일본
High Performance Normally-off Tri-gate AlGaN/GaN MIS-HEMT with Partially Recessed MIS Structure
차호영
Article
Issue Date
2018
Citation
학회논문지, v.1, no.1, pp.1 - 11
Publisher
학회
Negative Capacitance AlGaN/GaN Heterojunction Field-Effect Transistors Using Ferroelectric Phase ALD-HfO2 with 22 mV/dec Subthreshold Slope
차호영
Article
Issue Date
2018
Citation
학회논문지, v.1, no.1, pp.1 - 11
Publisher
학회
Effect of Deposition Temperature on Plasma-Enhanced Atomic Layer Deposited AlN/InGaAs MOS Characteristics
차호영
Article
Issue Date
2018
Citation
학회논문지, v.1, no.1, pp.1 - 11
Publisher
학회
Partially-Recessed AlGaN/GaN MIS-HEMT with Aluminum Oxynitride Gate Insulator
차호영
Article
Issue Date
2018
Citation
학회논문지, v.1, no.1, pp.1 - 11
Publisher
학회
AlGaN/GaN HEMT with pGaN Passivation
차호영
Article
Issue Date
2018
Citation
학회논문지, v.1, no.1, pp.1 - 11
Publisher
학회
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