1/f noise characteristics of AlGaN/GaN HEMTs with periodically carbon-doped GaN buffer layer
DC Field | Value | Language |
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dc.contributor.author | Im, Ki-Sik | - |
dc.contributor.author | Choi, Jinseok | - |
dc.contributor.author | Hwang, Youngmin | - |
dc.contributor.author | An, Sung Jin | - |
dc.contributor.author | Roh, Jea-Seung | - |
dc.contributor.author | Kang, Seung-Hyeon | - |
dc.contributor.author | Lee, Jun-Hyeok | - |
dc.contributor.author | Lee, Jung-Hee | - |
dc.date.available | 2020-05-25T08:50:32Z | - |
dc.date.created | 2020-05-21 | - |
dc.date.issued | 2019-07-15 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/17279 | - |
dc.description.abstract | We investigate the DC and 1/f noise properties in Al0.25Ga0.75N/GaN high-electron mobility transistors (HEMTs) with two types of 2 pm-thick periodically carbon-doped GaN buffer layer (PC-doped GaN buffer) with and without inserting the 30 nm-thick Al0.05Ga0.95N back barrier layer between the GaN channel layer and the PC doped GaN buffer. The PC-doped GaN buffer layer consists of multiple layers of 12 nm-thick C-doped GaN layer with doping concentration of 1 x 10(18) cm(-3) and 50 nm-thick undoped GaN layer with unintentional n-typing concentration of 2 x 10(16) cm(-3). A reference AlGaN/GaN HEMT with 2 pm-thick highly-resistive GaN buffer layer without C-doping is also fabricated for comparison. Similarly to the reference AlGaN/GaN HEMT, the AlGaN/GaN HEMTs with PC-doped GaN buffer show typical 1/f noise characteristics mainly due to the trapping effects at the AlGaN/GaN interface from subthreshold region to strong-accumulation region, which indicates that the deep trapping effects in the PC-doped GaN buffer layer is negligible, and experience the correlated mobility fluctuations (CMF), which is convinced from the drain current power spectral density (PSD) versus drain current. At off-state (deep-subthreshold region), on the other hand, the HEMTs with the PC-doped GaN buffer layer exhibit 1/f(2) noise characteristics, which are closely related to the generation-recombination (g-r) noise caused by the spatial trapping/detrapping process between the deep acceptor in the C-doped layer and the shallow donor in the undoped layer in the PC-doped GaN buffer, while the reference HEMT still shows typical 1/f noise characteristics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | LOW-FREQUENCY NOISE | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.title | 1/f noise characteristics of AlGaN/GaN HEMTs with periodically carbon-doped GaN buffer layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Roh, Jea-Seung | - |
dc.identifier.doi | 10.1016/j.mee.2019.110985 | - |
dc.identifier.wosid | 000480665600020 | - |
dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.215 | - |
dc.relation.isPartOf | MICROELECTRONIC ENGINEERING | - |
dc.citation.title | MICROELECTRONIC ENGINEERING | - |
dc.citation.volume | 215 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LOW-FREQUENCY NOISE | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordAuthor | AlGaN/CaN | - |
dc.subject.keywordAuthor | HEMT | - |
dc.subject.keywordAuthor | Carbon-doped buffer layer | - |
dc.subject.keywordAuthor | AlGaN back barrier layer | - |
dc.subject.keywordAuthor | 1/f noise characteristics | - |
dc.subject.keywordAuthor | Correlated mobility fluctuations (CMF) | - |
dc.subject.keywordAuthor | Deep acceptor | - |
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