Ti 쇼트키 배리어 다이오드의 Al 확산 방지를 위한 SC-1 세정 효과
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최진석 | - |
dc.contributor.author | 최여진 | - |
dc.contributor.author | 안성진 | - |
dc.date.available | 2021-04-29T08:40:52Z | - |
dc.date.created | 2021-03-09 | - |
dc.date.issued | 2021-02 | - |
dc.identifier.issn | 1225-0562 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/19054 | - |
dc.description.abstract | We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD. | - |
dc.language | 한국어 | - |
dc.language.iso | ko | - |
dc.publisher | 한국재료학회 | - |
dc.title | Ti 쇼트키 배리어 다이오드의 Al 확산 방지를 위한 SC-1 세정 효과 | - |
dc.title.alternative | Effect of SC-1 Cleaning to Prevent Al Diffusion for Ti Schottky Barrier Diode | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | 최진석 | - |
dc.contributor.affiliatedAuthor | 최여진 | - |
dc.contributor.affiliatedAuthor | 안성진 | - |
dc.identifier.doi | 10.3740/MRSK.2021.31.2.97 | - |
dc.identifier.wosid | 000632011900003 | - |
dc.identifier.bibliographicCitation | 한국재료학회지, v.31, no.2, pp.97 - 100 | - |
dc.relation.isPartOf | 한국재료학회지 | - |
dc.citation.title | 한국재료학회지 | - |
dc.citation.volume | 31 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 97 | - |
dc.citation.endPage | 100 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002691403 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordAuthor | Schottky barrier diode | - |
dc.subject.keywordAuthor | Al diffusion | - |
dc.subject.keywordAuthor | SC-1 | - |
dc.subject.keywordAuthor | Ti silicide | - |
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