GaN nanowire/thin film vertical structure p-n junction light-emitting diodes
DC Field | Value | Language |
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dc.contributor.author | Hong, Young Joon | - |
dc.contributor.author | Lee, Chul-Ho | - |
dc.contributor.author | Park, Jun Beom | - |
dc.contributor.author | An, Sung Jin | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.date.available | 2021-04-29T08:43:35Z | - |
dc.date.created | 2020-06-16 | - |
dc.date.issued | 2013-12-23 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/19196 | - |
dc.description.abstract | Here, we report vertical-type GaN nanowire-based light-emitting diodes (LEDs) fabricated by the metal-catalyzed vapor-liquid-solid (VLS) method. The nickel-catalyzed VLS process yielded both n-GaN nanowires and GaN nanoislands on substrates. The nanoislands markedly deteriorated the diode and electroluminescent characteristics in n-nanowire/p-film LED structures because of parasitic resistance and deep level emission caused by nanoislands. By burying the nanoislands with an insulating layer and adopting coaxial p-n junction nanowire structures, nanowire-based LEDs were shown to exhibit superior device performance, including highly rectifying and monochromatic electroluminescent characteristics. Thus, the undesirable effects associated with nanoislands were considerably suppressed. This work provides a rationale for designing high-performance vertical nanowire-based LEDs. (C) 2013 AIP Publishing LLC. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | INAS NANOWIRES | - |
dc.subject | GROWTH | - |
dc.subject | NUCLEATION | - |
dc.subject | EFFICIENCY | - |
dc.subject | SILICON | - |
dc.subject | CELLS | - |
dc.subject | SI | - |
dc.title | GaN nanowire/thin film vertical structure p-n junction light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | An, Sung Jin | - |
dc.identifier.doi | 10.1063/1.4860971 | - |
dc.identifier.wosid | 000329977400016 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.103, no.26 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 103 | - |
dc.citation.number | 26 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | INAS NANOWIRES | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | NUCLEATION | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | CELLS | - |
dc.subject.keywordPlus | SI | - |
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