Transparent conducting ZnO nanorods for nanoelectrodes as a reverse tunnel junction of GaN light emitting diode applications

Abstract

We demonstrated transparent vertical aligned ZnO nanorod arrays for nanoelectrodes as a reverse-tunnel junction of GaN LEDs. GaN LEDs with ZnO nanorod arrays for nanoelectrodes demonstrated three times enhanced light output power compared with that of GaN LEDs with tunnel junction ZnO thin film, resulting from increased light extraction efficiency. Tunnel junction ZnO nanorod arrays for nanoelectrodes offer both high transparent current spreading layer for uniform current injection and easy method for high extraction efficiency. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4724326]