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A D-Band Low-Power and High-Efficiency Frequency Multiply-by-9 FMCW Radar Transmitter in 28-nm CMOS

Authors
Park, SehoonPark, Dae-WoongVaesen, KristofKankuppe, AnirudhSinha, Siddharthavan Liempd, BarendWambacq, PietCraninckx, Jan
Issue Date
Jul-2022
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Radar; Radar antennas; Gain; Transistors; System-on-chip; Radar cross-sections; Dipole antennas; Amplifier; CMOS; dual-peak; frequency tripler; frequency-modulated continuous-wave (FMCW) radar transmitter (TX); gain boosting; maximum achievable gain (Gmax); terahertz (THz)
Citation
IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.57, no.7, pp 2114 - 2129
Pages
16
Journal Title
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume
57
Number
7
Start Page
2114
End Page
2129
URI
https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/21035
DOI
10.1109/JSSC.2022.3157643
ISSN
0018-9200
1558-173X
Abstract
This article presents a 135-155-GHz low-power and high-efficiency frequency multiply-by-9 (x9) frequency-modulated continuous-wave (FMCW) radar transmitter (TX). Starting from a 16-GHz frequency-chirping input signal, cascaded frequency triplers at V-band (40-75 GHz) and D-band (110-170 GHz) bring the signal to the D-band, subsequently amplified and radiated via a power amplifier (PA) and an on-chip antenna at D-band. The D-band PA with a reduced gain of transistors at f $_{max}$ /2 proposes a broadband gain-boosting technique, achieving a maximum achievable gain (G $_{max}$ ) for broad frequency range with high-order embedding passives. The x9 chain proposes phase-controlled frequency triplers that align the phase of each harmonic contribution and boost the third harmonic output power, conversion gain, and dc-to-RF efficiency. Implemented in a 28-nm CMOS process, the TX achieves a measured effective isotropic radiated power (EIRP) of 9.4 dBm, a dc-EIRP efficiency of 16.6% while exhibiting an antenna gain de-embedded output power of 7.1 dBm, and a dc-to-RF efficiency of 9.7% with less than 77-mW dc power consumption.
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