Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor
DC Field | Value | Language |
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dc.contributor.author | Mallem, Siva Pratap Reddy | - |
dc.contributor.author | Puneetha, Peddathimula | - |
dc.contributor.author | Lee, Dong-Yeon | - |
dc.contributor.author | Kim, Yoonkap | - |
dc.contributor.author | Kim, Han-Jung | - |
dc.contributor.author | Im, Ki-Sik | - |
dc.contributor.author | An, Sung-Jin | - |
dc.date.accessioned | 2023-11-21T01:40:26Z | - |
dc.date.available | 2023-11-21T01:40:26Z | - |
dc.date.created | 2023-11-20 | - |
dc.date.issued | 2023-07 | - |
dc.identifier.issn | 2079-4991 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/21811 | - |
dc.description.abstract | We used capacitance-voltage (C-V), conductance-voltage (G-V), and noise measurements to examine the carrier trap mechanisms at the surface/core of an AlGaN/GaN nanowire wrap-gate transistor (WGT). When the frequency is increased, the predicted surface trap density promptly drops, with values ranging from 9.1 x 10(13) eV(-1.)cm(-2) at 1 kHz to 1.2 x 10(11) eV(-1.)cm(-2) at 1 MHz. The power spectral density exhibits 1/f-noise behavior in the barrier accumulation area and rises with gate bias, according to the 1/f-noise features. At lower frequencies, the device exhibits 1/f-noise behavior, while beyond 1 kHz, it exhibits 1/f(2)-noise behavior. Additionally, when the fabricated device governs in the deep-subthreshold regime, the cutoff frequency for the 1/f(2)-noise features moves to the subordinated frequency (similar to 10(2) Hz) side. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.title | Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Mallem, Siva Pratap Reddy | - |
dc.contributor.affiliatedAuthor | An, Sung-Jin | - |
dc.identifier.doi | 10.3390/nano13142132 | - |
dc.identifier.scopusid | 2-s2.0-85166206623 | - |
dc.identifier.wosid | 001036750400001 | - |
dc.identifier.bibliographicCitation | NANOMATERIALS, v.13, no.14 | - |
dc.relation.isPartOf | NANOMATERIALS | - |
dc.citation.title | NANOMATERIALS | - |
dc.citation.volume | 13 | - |
dc.citation.number | 14 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PERSISTENT PHOTOCONDUCTIVITY | - |
dc.subject.keywordPlus | FREQUENCY | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordAuthor | carrier trap | - |
dc.subject.keywordAuthor | 1/f-noise | - |
dc.subject.keywordAuthor | nanowire | - |
dc.subject.keywordAuthor | AlGaN | - |
dc.subject.keywordAuthor | GaN | - |
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