Long Life-Time Amorphous-InGaZnO TFT-Based Shift Register Using a Reset Clock Signal
- Authors
- Jeong, Hoon; Choi, Byung Kook; Chung, Hoon-Ju; Lee, Sang Gul; Ha, Yong Min; Jang, Jin
- Issue Date
- Aug-2014
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Amorphous indium-gallium-zinc-oxide (a-IGZO); shift register; positive bias temperature stress (PBTS); thin-film transistor (TFT)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.35, no.8, pp 844 - 846
- Pages
- 3
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 35
- Number
- 8
- Start Page
- 844
- End Page
- 846
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/22452
- DOI
- 10.1109/LED.2014.2329933
- ISSN
- 0741-3106
1558-0563
- Abstract
- We report a long life-time shift register (SR) made of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The life-time of an SR is determined by the stability of the pull-down TFT, which is always under positive bias stress (PBS). To compensate for the nonrecovering characteristic of a-IGZO TFTs, the gate ON time of the pull-down TFT is reduced from 50% to 5% duty ratio by introducing a reset clock signal. By fitting the TFT's PBS-induced threshold voltage shifts to stretched exponentials, the life-time of the SR is estimated to increase from 1.7 to 17.5 years, owing to the reset clock signal with short-term duty.
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