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Techniques for measuring thermal expansion and creep of polysilicon
- Authors
- Oh, CS; Sharpe, WN
- Issue Date
- 15-Apr-2004
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- temperature; polysilicon; interferometry; thermal expansion; creep
- Citation
- SENSORS AND ACTUATORS A-PHYSICAL, v.112, no.1, pp 66 - 73
- Pages
- 8
- Journal Title
- SENSORS AND ACTUATORS A-PHYSICAL
- Volume
- 112
- Number
- 1
- Start Page
- 66
- End Page
- 73
- ISSN
- 0924-4247
- Abstract
- Techniques and procedures are presented for measuring strain directly on thin-film polysilicon at high temperatures. Narrow platinum lines are deposited 250 mum apart on tensile specimens that are 3.5 mum thick. Strain is measured by laser-based interferometry at temperatures up to 600degreesC. Specimens that are 600 mum wide are heated resistively, and narrower specimens (50 mum wide) are heated in a windowed furnace. Initial and demonstrative measurements of the coefficient of thermal expansion and creep behavior are presented. (C) 2004 Elsevier B.V. All rights reserved.
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