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Issues and reliability of high-density FeRAMs
- Issue Date
- Apr-2003
- Publisher
- INST PURE APPLIED PHYSICS
- Keywords
- ferroelectric; memory; BLT; reliability; design architecture
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.42, no.4B, pp 2096 - 2099
- Pages
- 4
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
- Volume
- 42
- Number
- 4B
- Start Page
- 2096
- End Page
- 2099
- ISSN
- 0021-4922
1347-4065
- Abstract
- We discuss some technical issues on the realization of high-density ferroelectric random access memory (FeRAM). Due to reliability concerns of ferroelectric materials, such as fatigue, retention, and imprint, an extra sensing margin is required. In order to overcome these, drawbacks, we have improved the ferroelectric capacitor process and design architecture. The fatigue and imprint degradations of the ferroelectric capacitor are significantly suppressed using the newly developed (Bi1-xLax)(4)Ti3O12 (BLT) films. The design architecture was improved using the split word line (SWL) cell array and current gain cell (CGC) operation. Using the above BLT capacitors and design architectures, we have obtained a high sensing margin, a high cell efficiency, and a small cross-talk noise in high-density FeRAMs.
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