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CVD법을 이용한 그래핀합성에 미치는 온도와 압력의 영향Influence of Temperature and Pressure on Graphene Synthesis by Chemical Vapor Deposition
- Other Titles
- Influence of Temperature and Pressure on Graphene Synthesis by Chemical Vapor Deposition
- Issue Date
- 2015
- Publisher
- 한국열처리공학회
- Keywords
- Chemical vapor deposition; Graphene; Evaporating; MoO3 thin films
- Citation
- 열처리공학회지, v.28, no.1, pp 7 - 16
- Pages
- 10
- Journal Title
- 열처리공학회지
- Volume
- 28
- Number
- 1
- Start Page
- 7
- End Page
- 16
- ISSN
- 1225-1070
2508-4046
- Abstract
- The fabrication of high quality graphene using chemical vapor deposition (CVD) method for applicationin semiconductor, display and transparent electrodes is investigated. Temperature and pressure have majorimpact on the growth of graphene. Graphene doping was obtained by deposition of MoO3 thin films using thermalevaporator. Bilayer graphene and the metal layer graphene were obtained. According to the behavior ofgraphene growth P-type doping was confirmed. Graphene obtained through experiments was analyzed usingoptical microscopy, Raman spectroscopy, UV-visible light spectrophotometer, 4-point probe sheet resistancemeter and atomic force microscopy.
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Collections - School of Electronic Engineering > 1. Journal Articles
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