CMP 공정에서 압력과 정반속도가 사파이어 웨이퍼 재료제거율에 미치는 영향The Effect of Pressure and Platen Speed on the Material Removal Rate of Sapphire Wafer in the CMP Pro
- Other Titles
- The Effect of Pressure and Platen Speed on the Material Removal Rate of Sapphire Wafer in the CMP Pro
- Authors
- 박상현; 안범상; 이종찬
- Issue Date
- 2016
- Publisher
- 한국트라이볼로지학회
- Keywords
- 연마; 표면거칠기; 재료제거율; 사피이어 웨이퍼; polishing; roughness; material removal rate; sapphire wafer
- Citation
- 한국윤활학회지, v.32, no.2, pp 67 - 71
- Pages
- 5
- Journal Title
- 한국윤활학회지
- Volume
- 32
- Number
- 2
- Start Page
- 67
- End Page
- 71
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/23447
- DOI
- 10.9725/kstle.2016.32.2.67
- ISSN
- 1229-4845
2287-4666
- Abstract
- This study investigates the characteristics of the sapphire wafer chemical mechanical polishing (CMP) process. The material removal rate is one of the most important factors since it has a significant impact on the production efficiency of a sapphire wafer. Some of the factors affecting the material removal rate include the pressure, platen speed and slurry. Among the factors affecting the CMP process, we analyzed the trends in the material removal rate and surface roughness, which are mechanical factors corresponding to both the pressure and platen speed, were analyzed. We also analyzed the increase in the material removal rate, which is proportional to the pressure and platen speed, using the Preston equation. In the experiment, after polishing a 4-inch sapphire wafer with increasing pressure and platen speed, we confirmed the material removal rate via thickness measurements. Further, surface roughness measurements of the sapphire wafer were performed using atomic force microscopy (AFM) equipment. Using the measurement results, we analyzed the trends in the surface roughness with the increase in material removal rate. In addition, the experimental results, confirmed that the material removal rate increases in proportion to the pressure and platen speed. However, the results showed no association between the material removal rate and surface roughness. The surface roughness after the CMP process showed a largely consistent trend. This study demonstrates the possibility to improve the production efficiency of sapphire wafer while maintaining stable quality via mechanical factors associated with the CMP process.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - Department of Mechanical Design Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.