CVD-SiC 소재의 가공 특성에 관한 연구

Abstract

A plasma gas control apparatus for semiconductor plasma etching processes securely holds a cathode forforming a plasma, confines the plasma during the plasma etching process, and discharges gas after etching. Itis a key part of the etching process. With the advancement of semiconductor technology, there is increasinginterest in parts for semiconductor manufacturing that directly affect wafers. Accordingly, in order to replacethe plasma gas control device with a CVD-SiC material superior in mechanical properties to existing SiCs(Sintered-SiC, RB-SiC), a study on the grinding characteristics of CVD-SiC was carried out. It is confirmedthat the optimal grinding condition was obtained when the result table feed rate was 2 m/min and the infeeddepth was 5 ㎛.