A 640 x 640 Fully Dynamic CMOS Image Sensor for Always-On Operation
- Authors
- Park, Injun; Jo, Woojin; Park, Chanmin; Park, Byungchoul; Cheon, Jimin; Chae, Youngcheol
- Issue Date
- Apr-2020
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Always-on; CMOS image sensor; dynamic bias comparator; fully dynamic CMOS image sensor; dynamic single-slope (SS) analog-to-digital converter (ADC); dynamic source follower (SF); two-step counter
- Citation
- IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.55, no.4, pp 898 - 907
- Pages
- 10
- Journal Title
- IEEE JOURNAL OF SOLID-STATE CIRCUITS
- Volume
- 55
- Number
- 4
- Start Page
- 898
- End Page
- 907
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/25952
- DOI
- 10.1109/JSSC.2019.2959486
- ISSN
- 0018-9200
1558-173X
- Abstract
- This article presents a 640 x 640 fully dynamic CMOS image sensor for the always-on operation. It consists of a dynamic pixel source follower (SF), whose output signal is sampled into a parasitic column capacitor and then read out by a dynamic single-slope (SS) analog-to-digital converter (ADC) based on a dynamic bias comparator and an energy-efficient two-step counter. The prototype sensor was implemented in a 110-nm CMOS process, achieving 0.3% peak non-linearity, 6.1 e(rms)(-) random noise (RN), and 67-dB dynamic range. The power consumption is only 2.1 mW at 44 frames per second (fps) and is further reduced to 140 mu W at 5 fps with the subsampled 320 x 320 mode. This sensor achieves a state-of-the-art energy efficiency figure-of-merit of 0.71 e(-).nJ.
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