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A 640 x 640 Fully Dynamic CMOS Image Sensor for Always-On Operation

Authors
Park, InjunJo, WoojinPark, ChanminPark, ByungchoulCheon, JiminChae, Youngcheol
Issue Date
Apr-2020
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Always-on; CMOS image sensor; dynamic bias comparator; fully dynamic CMOS image sensor; dynamic single-slope (SS) analog-to-digital converter (ADC); dynamic source follower (SF); two-step counter
Citation
IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.55, no.4, pp 898 - 907
Pages
10
Journal Title
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume
55
Number
4
Start Page
898
End Page
907
URI
https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/25952
DOI
10.1109/JSSC.2019.2959486
ISSN
0018-9200
1558-173X
Abstract
This article presents a 640 x 640 fully dynamic CMOS image sensor for the always-on operation. It consists of a dynamic pixel source follower (SF), whose output signal is sampled into a parasitic column capacitor and then read out by a dynamic single-slope (SS) analog-to-digital converter (ADC) based on a dynamic bias comparator and an energy-efficient two-step counter. The prototype sensor was implemented in a 110-nm CMOS process, achieving 0.3% peak non-linearity, 6.1 e(rms)(-) random noise (RN), and 67-dB dynamic range. The power consumption is only 2.1 mW at 44 frames per second (fps) and is further reduced to 140 mu W at 5 fps with the subsampled 320 x 320 mode. This sensor achieves a state-of-the-art energy efficiency figure-of-merit of 0.71 e(-).nJ.
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