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Intense Pulsed Light Thermal Treatment of Pb(Zr,Ti)O<sub>3</sub>/Metglas Heterostructured Films Resulting in Extreme Magnetoelectric Coupling of over 20 V cm<SUP>-1</SUP> Oe<SUP>-1</SUP>

Authors
Palneedi, HaribabuPatil, Deepak RajaramPriya, ShashankWoo, KyooheeYe, JiwonWoo, Yu MiHwang, Yun SikHwang, Geon-TaePark, Jung HwanRyu, Jungho
Issue Date
Aug-2023
Publisher
WILEY-V C H VERLAG GMBH
Keywords
aerosol deposition; intense pulsed light; magnetoelectric composites; pulse duration
Citation
ADVANCED MATERIALS, v.35, no.32
Journal Title
ADVANCED MATERIALS
Volume
35
Number
32
URI
https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/26383
DOI
10.1002/adma.202303553
ISSN
0935-9648
1521-4095
Abstract
Magnetoelectric (ME) film composites consisting of piezoelectric and magnetostrictive materials are promising candidates for application in magnetic field sensors, energy harvesters, and ME antennas. Conventionally, high-temperature annealing is required to crystallize piezoelectric films, restricting the use of heat-sensitive magnetostrictive substrates that enhance ME coupling. Herein, a synergetic approach is demonstrated for fabricating ME film composites that combines aerosol deposition and instantaneous thermal treatment based on intense pulsed light (IPL) radiation to form piezoelectric Pb(Zr,Ti)O-3 (PZT) thick films on an amorphous Metglas substrate. IPL rapidly anneals PZT films within a few milliseconds without damaging the underlying Metglas. To optimize the IPL irradiation conditions, the temperature distribution inside the PZT/Metglas film is determined using transient photothermal computational simulation. The PZT/Metglas films are annealed using different IPL pulse durations to determine the structure-property relationship. IPL treatment results in an enhanced crystallinity of the PZT, thus improving the dielectric, piezoelectric, and ME properties of the composite films. An ultrahigh off-resonance ME coupling (& AP;20 V cm(-1) Oe(-1)) is obtained for the PZT/Metglas film that is IPL annealed at a pulse width of 0.75 ms (an order of magnitude higher than that reported for other ME films), confirming the potential for next-generation, miniaturized, and high-performance ME devices.
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