A Novel Analysis of L-gd Dependent-1/f Noise in In0.08Al0.92N/GaN
- Authors
- Seo, Jae Hwa; Yoon, Young Jun; Son, Dong-Hyeok; Kim, Jeong-Gil; Lee, Jong-Ho; Lee, Jung-Hee; Im, Ki-Sik; Kang, In Man
- Issue Date
- Oct-2018
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- In0.08Al0.92N/GaN; high-electron mobility transistor (HEMT); finFET; low-frequency noise; carrier number fluctuation (CNF); correlated mobility fluctuation (CMF)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.39, no.10, pp 1552 - 1555
- Pages
- 4
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 39
- Number
- 10
- Start Page
- 1552
- End Page
- 1555
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/26637
- DOI
- 10.1109/LED.2018.2865564
- ISSN
- 0741-3106
1558-0563
- Abstract
- In0.08Al0.92N/GaN fin-type high-electron mobility transistors (fin-HEMTs) with different gate-to-drain lengths (L-gd) are fabricated and characterized by dc and low-frequency noise (LFN) measurements. The fabricated device with the largest L-gd exhibits the degradation of the maximum drain current and transconductance with a positive shift of the threshold voltage. LFN measurements of the In0.08Al0.92N/GaN fin-HEMTs reveal clear 1/f behavior of the noise spectra, and the minimum value is observed in the device at L-gd = 20 mu m. The devices with smaller L-gd follow a carrier number fluctuation noise model owing to electron trapping/detrapping into the In0.08Al0.92N barrier layer from the 2-D electron gas (2DEG) channel. In contrast, the device with the largest L-gd shows correlated mobility fluctuations due to the large 2DEG mobility fluctuations in the large access area.
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