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Effects of SiO2 addition on discharge characteristics of the MgO protective layer in plasma display panel
- Authors
- Lee, H. K.; Kim, J. W.; Park, S. J.; Choi, S. Y.
- Issue Date
- 23-Apr-2007
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- plasma display panel; MgO-SiO2; protective layer; crystallinity; surface roughness; discharge characteristics
- Citation
- THIN SOLID FILMS, v.515, no.12, pp 5113 - 5117
- Pages
- 5
- Journal Title
- THIN SOLID FILMS
- Volume
- 515
- Number
- 12
- Start Page
- 5113
- End Page
- 5117
- ISSN
- 0040-6090
- Abstract
- In order to improve the discharge characteristics of MgO protective layer, SiO2 was added to MgO thin films. The MgO-SiO2 thin films were deposited by electron beam evaporation method. The crystallinity and surface roughness of thin films were determined by XRD and AFM. Discharge characteristics of MgO-SiO2 protective layers were observed by changes in discharging voltages and SEE and memory coefficients as a function of Si concentration in the protective layer. The discharge characteristics of MgO-SiO2 layer were mainly affected by changes in crystallinity and surface roughness of films with Si concentration in the range of present study. With addition of 12.5 Si at.% in MgO-SiO2 protective layer, the discharge voltages and memory and SEE coefficients were considerably improved in comparison to pure MgO protective layer. (c) 2006 Elsevier B.V. All rights reserved.
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