Size-dependent Field-emission Properties from Triangular-shaped GaN Nanostructures
- Authors
- Dinh, Duc V.; Yang, J. H.; Kang, S. M.; Kim, S. W.; Yoon, D. H.
- Issue Date
- Jul-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- GaN nanostructures; Growth from vapors; Field emission
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.1, pp 202 - 206
- Pages
- 5
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 55
- Number
- 1
- Start Page
- 202
- End Page
- 206
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/27306
- ISSN
- 0374-4884
1976-8524
- Abstract
- Gallium nitride (GaN) nanostructures were synthesized on Si substrates by using the vapor-phase epitaxy (VPE) method. The as-synthesized GaN nanostructures with a hexagonal, single-crystalline structure possessed a triangular cross-section with nanorod and nanowire diameters ranging from about 100 to 280 nm and from about 20 to 60 run, respectively. The field-emission (FE) properties of the GaN nanostructures were investigated in terms of their size dependence. Turn-on fields of about 4.85 V/mu m and 4.10 V/mu m, respectively, for the GaN nanorods and nanowires were obtained, corresponding to field-enhancement factors of about 373 and 1427. The higher aspect ratio of the GaN nanowires compared to that of the GaN nanorods caused the differences in FE properties.
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