실리콘 레이저 소결에서 은 나노 입자의 도핑 효과에 관한 연구

Abstract

Silicon is used as an essential material in the electronic and energy industries owing to its high accessibility and inherent semiconducting properties. Typically, silicon devices are produced by top-down chemical etchings, such as anisotropic etching and reactive ion etching, to make micropatterns and surface textures. In addition, doping using thermal diffusion or ion implantation is also required to optimize electrical characteristics. We propose a one-step method for fabricating multi-scale silicon layer based on the concurrent interaction of doping of silver nanoparticles during laser-induced sintering of silicon nanocrystals. The silver-doped silicon patterns were characterized by a uniform distribution and the concentration of dopants was easily adjustable by controlling the relative amount of silver nanoparticles. We expect that this method will contribute to fabricating multi-scale silicon semiconductors without using complicated chemical and vacuum processes.