Trap and 1/f-noise effects at the surface and core of GaN nanowire gate-all-around FET structure
- Authors
- Reddy, Mallem Siva Pratap; Im, Ki-Sik; Lee, Jung-Hee; Caulmione, Raphael; Cristoloveanu, Sorin
- Issue Date
- Apr-2019
- Publisher
- TSINGHUA UNIV PRESS
- Keywords
- gate-all-around field effect transistor (FET); nanowire; GaN; trap; 1; f-noise
- Citation
- NANO RESEARCH, v.12, no.4, pp 809 - 814
- Pages
- 6
- Journal Title
- NANO RESEARCH
- Volume
- 12
- Number
- 4
- Start Page
- 809
- End Page
- 814
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/28209
- DOI
- 10.1007/s12274-019-2292-0
- ISSN
- 1998-0124
1998-0000
- Abstract
- Using capacitance, conductance and noise measurements, we investigate the trapping behavior at the surface and in the core of triangular-shaped one-dimensional (1D) array of GaN nanowire gate-all-around field effect transistor (GAA FET), fabricated via a top-down process. The surface traps in such a low dimensional device play a crucial role in determining the device performance. The estimated surface trap density rapidly decreases with increasing frequency, ranging from 6.07 x 10(12) cm(-2)eV(-1) at 1 kHz to 1.90 x 10(11) cm(-2)eV(-1) at 1 MHz, respectively. The noise results reveal that the power spectral density increases with gate voltage and clearly exhibits 1/f-noise signature in the accumulation region (V-gs > V-th = 3.4 V) for all frquencies. In the surface depletion region (1.5 V < V-gs < V-th), the device is governed by 1/f at lower frequencies and 1/f(2) noise at frequencies higher than 5 kHz. The 1/f(2) noise characteristics is attributed to additional generation-recombination (G-R), mostly caused by the electron trapping/detrapping process through deep traps located in the surface depletion region of the nanowire. The cutoff frequency for the 1/f(2) noise characteristics further shifts to lower frequency of 10(2)-10(3) Hz when the device operates in deep-subthreshold region (V-gs < 1.5 V). In this regime, the electron trapping/detrapping process through deep traps expands into the totally depleted nanowire core and the G-R noise prevails in the entire nanowire channel.
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