Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al2O3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes

Abstract

AlGaN/GaN Schottky barrier diodes (SBDs) with high Al composition and high temperature atomic layer deposition (ALD) Al2O3 layers were investigated. Current-voltage (I-V), X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), and capacitance-voltage (C-V) measurements were conducted in order to find the leakage current mechanism and reduce the reverse leakage current. The fabricated AlGaN/GaN SBDs with high Al composition exhibited two orders' higher leakage current compared to the device with low Al composition (20%) due to large bulk and surface leakage components. The leakage current measured at -60 V for the fabricated SBD with Al2O3 deposited at temperature of 550 degrees C was decreased to 1.5 mu A, compared to the corresponding value of 3.2 mA for SBD with nonpassivation layer. The high quality ALD Al2O3 deposited at high temperature with low interface trap density reduces the donorlike surface states, which effectively decreases surface leakage current of the AlGaN/GaN SBD.