Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Effect of In-Situ Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETs
- Authors
- Lee, Jae-Hoon; Im, Ki-Sik; Lee, Jung-Hee
- Issue Date
- 2021
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- AlGaN/GaN; metal insulator semiconductor heterostructure field effect transistors (MISHFETs); in-situ silicon carbon nitride (SiCN); cap layer; 2DEG density; surface leakage current
- Citation
- IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.9, pp 728 - 734
- Pages
- 7
- Journal Title
- IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
- Volume
- 9
- Start Page
- 728
- End Page
- 734
- ISSN
- 2168-6734
- Abstract
- AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors (MISHFETs) with different thickness of in-situ silicon carbon nitride (SiCN) cap layer were investigated. It was found that in-situ SiCN layer not only increases the two dimensional electron gas (2DEG) density, but also effectively passivates the surface of the AlGaN/GaN MISHFET. The fabricated device with 2 nm-thick SiCN cap layer exhibits superior device performances, such as larger maximum transconductance (g(m)) and higher on/off drain-current ratio (I-ON/I-OFF) compared to those of the device without SiCN cap layer.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - ETC > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.