다이 및 와이어 본딩 공정을 위한 Sn-Sb Backside Metal의 계면 구조 및 전단 강도 분석Enhancing Die and Wire Bonding Process Reliability: Microstructure Evolution and Shear Strength Analysis of Sn-Sb Backside Metal
- Other Titles
- Enhancing Die and Wire Bonding Process Reliability: Microstructure Evolution and Shear Strength Analysis of Sn-Sb Backside Metal
- Authors
- 최여진; 백승문; 이유나; 안성진
- Issue Date
- Mar-2024
- Publisher
- 한국재료학회
- Keywords
- backside metal; Sn-Sb; die attach; nanomaterials; shear strength.
- Citation
- 한국재료학회지, v.34, no.3, pp 170 - 174
- Pages
- 5
- Journal Title
- 한국재료학회지
- Volume
- 34
- Number
- 3
- Start Page
- 170
- End Page
- 174
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/28593
- DOI
- 10.3740/MRSK.2024.34.3.170
- ISSN
- 1225-0562
2287-7258
- Abstract
- In this study, we report the microstructural evolution and shear strength of an Sn-Sb alloy, used for die attach process as a solder layer of backside metal (BSM). The Sb content in the binary system was less than 1 at%. A chip with the Sn-Sb BSM was attached to a Ag plated Cu lead frame. The microstructure evolution was investigated after die bonding at 330 °C, die bonding and isothermal heat treatment at 330 °C for 5 min and wire bonding at 260 °C, respectively. At the interface between the chip and lead frame, Ni3Sn4 and Ag3Sn intermetallic compounds (IMCs) layers and pure Sn regions were confirmed after die bonding. When the isothermal heat treatment is conducted, pure Sn regions disappear at the interface because the Sn is consumed to form Ni3Sn4 and Ag3Sn IMCs. After the wire bonding process, the interface is composed of Ni3Sn4, Ag3Sn and (Ag,Cu)3Sn IMCs. The Sn-Sb BSM had a high maximum shear strength of 78.2 MPa, which is higher than the required specification of 6.2 MPa. In addition, it showed good wetting flow.
- Files in This Item
-
Go to Link
- Appears in
Collections - Department of Materials Science and Engineering > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/28593)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.