Self-aligned coplanar amorphous indium zinc oxide thin-film transistors with high performance
DC Field | Value | Language |
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dc.contributor.author | Park, Jae Chul | - |
dc.contributor.author | Lee, Ho-Nyeon | - |
dc.date.accessioned | 2021-08-11T20:46:44Z | - |
dc.date.available | 2021-08-11T20:46:44Z | - |
dc.date.issued | 2015-01 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.issn | 1879-2405 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/11008 | - |
dc.description.abstract | Self-aligned coplanar amorphous indium zinc oxide thin-film transistors (a-IZO TFTs) were fabricated. The a-IZO TFTs had a field-effect mobility of mu(FE) = 24.4 cm(2) V-1 s(-1), a subthreshold slope of 180 mV/dec, and an on/off ratio of 10(9). As the channel length decreased, the threshold voltage V-TH shifted to more negative voltages, and mu(FE) increased due to the diffused carriers from the contact regions. The intrinsic field-effect mobility was estimated to be 15.05 cm(2) V-1 s(-1) in the linear mode and 13.28 cm(2) V-1 s(-1) in saturation mode. Under positive/negative bias-temperature-illumination stress, the shift in V-TH was less than +/- 0.7 V after 11,000 s. (C) 2014 Elsevier Ltd. All rights reserved. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Pergamon Press Ltd. | - |
dc.title | Self-aligned coplanar amorphous indium zinc oxide thin-film transistors with high performance | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1016/j.sse.2014.07.013 | - |
dc.identifier.scopusid | 2-s2.0-85027940157 | - |
dc.identifier.wosid | 000346547400032 | - |
dc.identifier.bibliographicCitation | Solid-State Electronics, v.103, pp 195 - 198 | - |
dc.citation.title | Solid-State Electronics | - |
dc.citation.volume | 103 | - |
dc.citation.startPage | 195 | - |
dc.citation.endPage | 198 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | THRESHOLD VOLTAGE | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | TFTS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | IMPROVEMENT | - |
dc.subject.keywordAuthor | Indium zinc oxide | - |
dc.subject.keywordAuthor | Self-aligned coplanar | - |
dc.subject.keywordAuthor | Thin-film transistors | - |
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