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Self-aligned coplanar amorphous indium zinc oxide thin-film transistors with high performance

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dc.contributor.authorPark, Jae Chul-
dc.contributor.authorLee, Ho-Nyeon-
dc.date.accessioned2021-08-11T20:46:44Z-
dc.date.available2021-08-11T20:46:44Z-
dc.date.issued2015-01-
dc.identifier.issn0038-1101-
dc.identifier.issn1879-2405-
dc.identifier.urihttps://scholarworks.bwise.kr/sch/handle/2021.sw.sch/11008-
dc.description.abstractSelf-aligned coplanar amorphous indium zinc oxide thin-film transistors (a-IZO TFTs) were fabricated. The a-IZO TFTs had a field-effect mobility of mu(FE) = 24.4 cm(2) V-1 s(-1), a subthreshold slope of 180 mV/dec, and an on/off ratio of 10(9). As the channel length decreased, the threshold voltage V-TH shifted to more negative voltages, and mu(FE) increased due to the diffused carriers from the contact regions. The intrinsic field-effect mobility was estimated to be 15.05 cm(2) V-1 s(-1) in the linear mode and 13.28 cm(2) V-1 s(-1) in saturation mode. Under positive/negative bias-temperature-illumination stress, the shift in V-TH was less than +/- 0.7 V after 11,000 s. (C) 2014 Elsevier Ltd. All rights reserved.-
dc.format.extent4-
dc.language영어-
dc.language.isoENG-
dc.publisherPergamon Press Ltd.-
dc.titleSelf-aligned coplanar amorphous indium zinc oxide thin-film transistors with high performance-
dc.typeArticle-
dc.publisher.location영국-
dc.identifier.doi10.1016/j.sse.2014.07.013-
dc.identifier.scopusid2-s2.0-85027940157-
dc.identifier.wosid000346547400032-
dc.identifier.bibliographicCitationSolid-State Electronics, v.103, pp 195 - 198-
dc.citation.titleSolid-State Electronics-
dc.citation.volume103-
dc.citation.startPage195-
dc.citation.endPage198-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusTHRESHOLD VOLTAGE-
dc.subject.keywordPlusHIGH-MOBILITY-
dc.subject.keywordPlusTFTS-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusIMPROVEMENT-
dc.subject.keywordAuthorIndium zinc oxide-
dc.subject.keywordAuthorSelf-aligned coplanar-
dc.subject.keywordAuthorThin-film transistors-
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