Self-Aligned Top-Gate Amorphous Indium Zinc Oxide Thin-Film Transistors Exceeding Low-Temperature Poly-Si Transistor Performance
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Jae Chul | - |
dc.contributor.author | Lee, Ho-Nyeon | - |
dc.contributor.author | Im, Seongil | - |
dc.date.accessioned | 2021-08-12T00:47:16Z | - |
dc.date.available | 2021-08-12T00:47:16Z | - |
dc.date.issued | 2013-08-14 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/13438 | - |
dc.description.abstract | Thin-film transistor (TFT) is a key component of active-matrix flat-panel displays (AMFPDs). These days, the low-temperature poly silicon (LTPS) TFTs are to match with advanced AMFPDs such as the active matrix organic light-emitting diode (AMOLED) display, because of their high mobility for fast pixel switching. However, the manufacturing process of LTPS TFT is quite complicated, costly, and scale-limited. Amorphous oxide semiconductor (AOS) TFT technology is another candidate, which is as simple as that of conventioanl amorphous (a)-Si TFTs in fabrication but provides much superior device performances to those of a-Si TFTs. Hence, various AOSs have been compared with LTPS for active channel layer of the advanced TFTs, but have always been found to be relatively inferior to LTPS. In the present work, we clear the persistent inferiority, innovating the device performaces of a-IZO TFT by adopting a self-aligned coplanar top-gate structure and modifying the surface of a-IZO material. Herein, we demonstrate a high-performance simple-processed a-IZO TFT with mobility of similar to 157 cm(2) V-1 s(-1), SS of similar to 190 mV dec(-1), and good bias/photostabilities, which overall surpass the performances of high-cost LTPS TFTs. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | American Chemical Society | - |
dc.title | Self-Aligned Top-Gate Amorphous Indium Zinc Oxide Thin-Film Transistors Exceeding Low-Temperature Poly-Si Transistor Performance | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1021/am401128p | - |
dc.identifier.scopusid | 2-s2.0-84882762992 | - |
dc.identifier.wosid | 000323241100032 | - |
dc.identifier.bibliographicCitation | ACS Applied Materials & Interfaces, v.5, no.15, pp 6990 - 6995 | - |
dc.citation.title | ACS Applied Materials & Interfaces | - |
dc.citation.volume | 5 | - |
dc.citation.number | 15 | - |
dc.citation.startPage | 6990 | - |
dc.citation.endPage | 6995 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | RESISTIVITY | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordAuthor | self-aligned top-gate structure | - |
dc.subject.keywordAuthor | amorphous indium zinc oxide | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordAuthor | N2O plasma treatment | - |
dc.subject.keywordAuthor | Ar plasma treatment | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(31538) 22, Soonchunhyang-ro, Asan-si, Chungcheongnam-do, Republic of Korea+82-41-530-1114
COPYRIGHT 2021 by SOONCHUNHYANG UNIVERSITY ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.