Improvement of the Performance and Stability of Oxide Semiconductor Thin-Film Transistors Using Double-Stacked Active Layers

Abstract

An amorphous oxide semiconductor thin-film transistor (TFT) with a 47.7-cm(2) . V-1 . s(-1) field-effect mobility (mu(FE)) and a 1.57-V threshold voltage (V-TH) was produced using a double-stacked active layer composed of a 5-nm indium-zinc-oxide layer and a 60-nm gallium-indium-zinc-oxide (GIZO) layer. The mu(FE) is about 2.3 times higher than that of a GIZO TFT, and the V-TH is almost same as that of a GIZO TFT. The stability of this TFT with a double-stacked active layer was superior to that of a GIZO TFT.