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The Effects of Gadolinium Incorporation Into Indium-Zinc-Oxide Thin-Film Transistors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Jae Chul | - |
| dc.contributor.author | Kim, Sang Wook | - |
| dc.contributor.author | Kim, Chang Jung | - |
| dc.contributor.author | Lee, Ho-Nyeon | - |
| dc.date.accessioned | 2021-08-12T03:24:56Z | - |
| dc.date.available | 2021-08-12T03:24:56Z | - |
| dc.date.issued | 2012-06 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.issn | 1558-0563 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/15124 | - |
| dc.description.abstract | We investigated the effects of gadolinium (Gd) incorporation into indium-zinc-oxide (IZO) thin-film transistors (TFTs) using radio-frequency cosputtering of IZO and Gd. A gadolinium-indium-zinc-oxide (Gd-IZO) TFT with 2.4 at.% Gd content had saturation-mode field-effect mobility, threshold voltage, and switching ratio (on current/off current) of 6.6 cm(2)V(-1)s(-1), 1.04 V, and on the order of 10(7), respectively, after thermal annealing at 250 degrees C. A Gd-IZO TFT with 2.4 at.% Gd content showed better switching performance and thermal stability than pure IZO TFTs due to stable ionic bond between Gd and O. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Institute of Electrical and Electronics Engineers | - |
| dc.title | The Effects of Gadolinium Incorporation Into Indium-Zinc-Oxide Thin-Film Transistors | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1109/LED.2012.2192710 | - |
| dc.identifier.scopusid | 2-s2.0-84861680341 | - |
| dc.identifier.wosid | 000305835000023 | - |
| dc.identifier.bibliographicCitation | IEEE Electron Device Letters, v.33, no.6, pp 809 - 811 | - |
| dc.citation.title | IEEE Electron Device Letters | - |
| dc.citation.volume | 33 | - |
| dc.citation.number | 6 | - |
| dc.citation.startPage | 809 | - |
| dc.citation.endPage | 811 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordAuthor | Indium | - |
| dc.subject.keywordAuthor | thin-film transistors (TFTs) | - |
| dc.subject.keywordAuthor | zinc | - |
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Related Researcher
- Lee, Ho nyeon
- College of Engineering (Department of Display and Electronic Information Engineering)