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Low-Temperature Fabrication and Characteristics of Lanthanum Indium Zinc Oxide Thin-Film Transistors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Jae Chul | - |
| dc.contributor.author | Kim, Sang Wook | - |
| dc.contributor.author | Kim, Chang Jung | - |
| dc.contributor.author | Lee, Ho-Nyeon | - |
| dc.date.accessioned | 2021-08-12T03:26:40Z | - |
| dc.date.available | 2021-08-12T03:26:40Z | - |
| dc.date.issued | 2012-05 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.issn | 1558-0563 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/15230 | - |
| dc.description.abstract | We fabricated lanthanum indium zinc oxide (IZO) (La-IZO) thin-film transistors (TFTs) using radio frequency cosputtering of IZO and lanthanum. The field-effect mobility and switching ratio of the La-IZO TFTs were 4.2 cm(2) . V-1 . s(-1) and on the order of 10(8), respectively, before thermal annealing and 3.02 cm(2) . V-1 . s(-1) and on the order of 10(10), respectively, after thermal annealing at 150 degrees C in air. Our La-IZO TFTs had better thermal stability than pure-IZO TFTs due to the stable ionic bond between La and O. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Institute of Electrical and Electronics Engineers | - |
| dc.title | Low-Temperature Fabrication and Characteristics of Lanthanum Indium Zinc Oxide Thin-Film Transistors | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1109/LED.2012.2188849 | - |
| dc.identifier.scopusid | 2-s2.0-84860360644 | - |
| dc.identifier.wosid | 000303322500019 | - |
| dc.identifier.bibliographicCitation | IEEE Electron Device Letters, v.33, no.5, pp 685 - 687 | - |
| dc.citation.title | IEEE Electron Device Letters | - |
| dc.citation.volume | 33 | - |
| dc.citation.number | 5 | - |
| dc.citation.startPage | 685 | - |
| dc.citation.endPage | 687 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | NITRIDE | - |
| dc.subject.keywordAuthor | Indium | - |
| dc.subject.keywordAuthor | lanthanum | - |
| dc.subject.keywordAuthor | thin-film transistors (TFTs) | - |
| dc.subject.keywordAuthor | zinc | - |
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Related Researcher
- Lee, Ho nyeon
- College of Engineering (Department of Display and Electronic Information Engineering)