P-type Copper Oxide Thin Films Deposited by Vacuum Thermal Evaporation

Abstract

Using vacuum thermal evaporation combined with post-deposition annealing, we obtained p-type copper oxide films with a hole concentration on the order of 10(16) cm(-3) and Hall mobility of over 5 cm(2) V-1 s(-1). These properties are in the range that can be used for an active layer of p-channel thin film transistors. We used air thermal annealing to convert n-type conduction of as-deposited films to p-type conduction, and determined that vacuum thermal annealing did not change the n-type conductivity of the as-deposited films.