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p-Channel Tin Monoxide Thin Film Transistor Fabricated by Vacuum Thermal Evaporation

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dc.contributor.authorLee, Ho-Nyeon-
dc.contributor.authorKim, Hyung-Jung-
dc.contributor.authorKim, Chang-Kyo-
dc.date.accessioned2021-08-12T07:34:52Z-
dc.date.available2021-08-12T07:34:52Z-
dc.date.issued2010-
dc.identifier.issn0021-4922-
dc.identifier.issn1347-4065-
dc.identifier.urihttps://scholarworks.bwise.kr/sch/handle/2021.sw.sch/18578-
dc.description.abstractBy using tin monoxide films, p-channel oxide semiconductor thin film transistors were fabricated with a bottom-gate and bottom-contact structure. A p-type tin monoxide semiconductor thin film was obtained from tin monoxide powder by vacuum thermal evaporation. The as-deposited film showed an amorphous phase, and a polycrystalline tin monoxide was obtained by thermal annealing after the deposition. The hole concentration was on the order of 10(17) cm(-3), and the Hall mobility was 2.83 cm(2) V(-1) s(-1). The resulting on-current/off-current ratio was more than 10(2), and the field-effect mobility was approximately 4 x 10(-5) cm(2) V(-1) s(-1). (C) 2010 The Japan Society of Applied Physics-
dc.language영어-
dc.language.isoENG-
dc.publisherIOP Publishing Ltd-
dc.titlep-Channel Tin Monoxide Thin Film Transistor Fabricated by Vacuum Thermal Evaporation-
dc.typeArticle-
dc.publisher.location영국-
dc.identifier.doi10.1143/JJAP.49.020202-
dc.identifier.scopusid2-s2.0-77950791171-
dc.identifier.wosid000275665700002-
dc.identifier.bibliographicCitationJapanese Journal of Applied Physics, v.49, no.2-
dc.citation.titleJapanese Journal of Applied Physics-
dc.citation.volume49-
dc.citation.number2-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusZNO-
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