p-Channel Tin Monoxide Thin Film Transistor Fabricated by Vacuum Thermal Evaporation

Abstract

By using tin monoxide films, p-channel oxide semiconductor thin film transistors were fabricated with a bottom-gate and bottom-contact structure. A p-type tin monoxide semiconductor thin film was obtained from tin monoxide powder by vacuum thermal evaporation. The as-deposited film showed an amorphous phase, and a polycrystalline tin monoxide was obtained by thermal annealing after the deposition. The hole concentration was on the order of 10(17) cm(-3), and the Hall mobility was 2.83 cm(2) V(-1) s(-1). The resulting on-current/off-current ratio was more than 10(2), and the field-effect mobility was approximately 4 x 10(-5) cm(2) V(-1) s(-1). (C) 2010 The Japan Society of Applied Physics