p-Channel Tin Monoxide Thin Film Transistor Fabricated by Vacuum Thermal Evaporation
- Authors
- Lee, Ho-Nyeon; Kim, Hyung-Jung; Kim, Chang-Kyo
- Issue Date
- 2010
- Publisher
- IOP Publishing Ltd
- Citation
- Japanese Journal of Applied Physics, v.49, no.2
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 49
- Number
- 2
- URI
- https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/18578
- DOI
- 10.1143/JJAP.49.020202
- ISSN
- 0021-4922
1347-4065
- Abstract
- By using tin monoxide films, p-channel oxide semiconductor thin film transistors were fabricated with a bottom-gate and bottom-contact structure. A p-type tin monoxide semiconductor thin film was obtained from tin monoxide powder by vacuum thermal evaporation. The as-deposited film showed an amorphous phase, and a polycrystalline tin monoxide was obtained by thermal annealing after the deposition. The hole concentration was on the order of 10(17) cm(-3), and the Hall mobility was 2.83 cm(2) V(-1) s(-1). The resulting on-current/off-current ratio was more than 10(2), and the field-effect mobility was approximately 4 x 10(-5) cm(2) V(-1) s(-1). (C) 2010 The Japan Society of Applied Physics
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Collections - College of Engineering > Department of Display and Electronic Information Engineering > 1. Journal Articles
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