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Effects of Mg doping and annealing temperature on the performance of Mg-doped ZnO nanoparticle thin-film transistors
- Issue Date
- Mar-2022
- Publisher
- Taylor & Francis
- Keywords
- Field-effect mobility; Mg-doped ZnO nanoparticles; oxygen vacancy; thin-film transistors; X-ray photoelectron spectroscopy
- Citation
- Molecular Crystals and Liquid Crystals, v.735, no.1, pp 61 - 74
- Pages
- 14
- Journal Title
- Molecular Crystals and Liquid Crystals
- Volume
- 735
- Number
- 1
- Start Page
- 61
- End Page
- 74
- ISSN
- 1542-1406
1543-5318
- Abstract
- Mg-doped ZnO nanoparticle (NP) thin-film transistors (TFTs) were fabricated using a solution process under a range of Mg content and annealing temperature conditions. The effects of Mg doping and annealing on the electrical properties of the Mg-doped TFTs were investigated. The experimental results demonstrate that critical Mg doping and thermal annealing improve the electrical characteristics of the TFTs. It can mainly be attributed to the suppression of oxygen vacancy formation verified from X-ray photoelectron spectroscopy (XPS) analyses and Hall measurements.
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Related Researcher
- Kim, CHANG KYO
- College of Engineering (Department of Display and Electronic Information Engineering)