Understanding the Electroluminescence Mechanism of CdSe/ZnS Quantum-Dot Light-Emitting Diodes With a Focus on Charge Carrier Behavior in Quantum-Dot Emissive Layers
DC Field | Value | Language |
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dc.contributor.author | Kim, Dongjin | - |
dc.contributor.author | Lee, Seyoung | - |
dc.contributor.author | Kim, Jimyoung | - |
dc.contributor.author | Lee, Honyeon | - |
dc.date.accessioned | 2023-12-13T07:32:43Z | - |
dc.date.available | 2023-12-13T07:32:43Z | - |
dc.date.issued | 2023-06 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.issn | 1558-0563 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/24828 | - |
dc.description.abstract | We analyzed the electroluminescence (EL) mechanisms of quantum-dotlight-emitting diodes (QLEDs) with a focus on charge carrier trapping/detrapping. Multilayer quantum-dot (QD) emissive layers (EMLs) exhibit low void density and many QD surface traps, which provide high efficiency in the low bias voltage region; the efficiency gradually decreases in the high bias voltage region. The roles played by traps and charge carrier trapping/detrapping during QLED EL were revealed by transient EL and impedance spectroscopy analyses. Charge carrier trapping/detrapping of QLEDs with a multilayer QD EML in the low bias voltage region promoted charge injection, rapid initiation of EL, and high current efficiency. In contrast to the conventional view, traps improved QLED performance. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | Understanding the Electroluminescence Mechanism of CdSe/ZnS Quantum-Dot Light-Emitting Diodes With a Focus on Charge Carrier Behavior in Quantum-Dot Emissive Layers | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/LED.2023.3268078 | - |
dc.identifier.scopusid | 2-s2.0-85153534868 | - |
dc.identifier.wosid | 001001401500021 | - |
dc.identifier.bibliographicCitation | IEEE Electron Device Letters, v.44, no.6, pp 959 - 962 | - |
dc.citation.title | IEEE Electron Device Letters | - |
dc.citation.volume | 44 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 959 | - |
dc.citation.endPage | 962 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | EFFICIENT | - |
dc.subject.keywordAuthor | Electron traps | - |
dc.subject.keywordAuthor | Quantum dots | - |
dc.subject.keywordAuthor | Charge carriers | - |
dc.subject.keywordAuthor | Light emitting diodes | - |
dc.subject.keywordAuthor | Voltage | - |
dc.subject.keywordAuthor | Transient analysis | - |
dc.subject.keywordAuthor | Performance evaluation | - |
dc.subject.keywordAuthor | Quantum-dot light-emitting diode | - |
dc.subject.keywordAuthor | transient electroluminescence | - |
dc.subject.keywordAuthor | impedance spectroscopy | - |
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