Improving the charge balance and performance of CdSe/ZnS quantum-dot light-emitting diodes with a sputtered zinc-tin-oxide electron-transport layer and a thermally evaporated tungsten-oxide charge-restricting layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Dong-Jin | - |
dc.contributor.author | Lee, Ho-Nyeon | - |
dc.date.accessioned | 2021-08-11T09:23:56Z | - |
dc.date.available | 2021-08-11T09:23:56Z | - |
dc.date.issued | 2019-10-01 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.issn | 1347-4065 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/4149 | - |
dc.description.abstract | The charge carrier balance and performance of CdSe/ZnS quantum-dot light-emitting diodes (QD-LEDs) with a vacuum-deposited electron-transport layer (ETL) and carrier-restricting layer (CRL) were successfully improved. Optimizing the fabrication process of the reactively sputtered zinc-tin-oxide (ZTO) ETL and adopting a thermally evaporated tungsten-oxide (WOx) CRL improved the electron-hole balance, thus leading to QD-LEDs with improved performance. Impedance spectroscopy analysis was successfully exploited in investigating charge carrier injection into each layer of the QD-LED and electron-hole recombination behaviors. The QD-LED with optimized ZTO ETL and without WOx CRL exhibited 2600 cd m(-2) luminance and 3.2 cd A(-1) current efficiency, and the QD-LED with both optimized ZTO ETL and a WOx CRL exhibited 3900 cd m(-2) luminance and 5.1 cd A(-1) current efficiency. These results imply a practical method for improving the electron-hole balance and performance of QD-LEDs, and provide a reliable technique for analyzing the carrier behavior of QD-LEDs. (C) 2019 The Japan Society of Applied Physics | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IOP Publishing Ltd | - |
dc.title | Improving the charge balance and performance of CdSe/ZnS quantum-dot light-emitting diodes with a sputtered zinc-tin-oxide electron-transport layer and a thermally evaporated tungsten-oxide charge-restricting layer | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.7567/1347-4065/ab3c77 | - |
dc.identifier.scopusid | 2-s2.0-85073238458 | - |
dc.identifier.wosid | 000485167200002 | - |
dc.identifier.bibliographicCitation | Japanese Journal of Applied Physics, v.58, no.10 | - |
dc.citation.title | Japanese Journal of Applied Physics | - |
dc.citation.volume | 58 | - |
dc.citation.number | 10 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | ALIGNMENT | - |
dc.subject.keywordPlus | POLYMER | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | QD-LED | - |
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