Fabrication of two-dimensional MoS2 thin-film transistors using a reactive thermal evaporation method combined with an annealing step
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Tae-Kwang | - |
dc.contributor.author | Lee, Ho-Nyeon | - |
dc.date.accessioned | 2021-08-11T13:44:04Z | - |
dc.date.available | 2021-08-11T13:44:04Z | - |
dc.date.issued | 2018 | - |
dc.identifier.issn | 1542-1406 | - |
dc.identifier.issn | 1543-5318 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/6867 | - |
dc.description.abstract | Two-dimensional (2-D) MoS2 films were fabricated by reactive thermal evaporation combined with thermal annealing. The 2-D nature of the MoS2 films is demonstrated by observation of direct transition and a Van Hove singularity in the absorbance curve. The 1T phase MoS2 is confirmed by X-ray photoelectron spectroscopy. MoS2 thin-film transistors (TFTs) are fabricated using the MoS2 active layer transferred onto an oxidized Si wafer from a sapphire wafer. The MoS2 TFT demonstrates a threshold voltage of 37.6V, a field-effect mobility of 6.94 cm(2)V(-1)s(-1) a sub-threshold swing of 29.2 V/dec and a switching ratio of 10(3). | - |
dc.format.extent | 7 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Taylor & Francis | - |
dc.title | Fabrication of two-dimensional MoS2 thin-film transistors using a reactive thermal evaporation method combined with an annealing step | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1080/15421406.2018.1466234 | - |
dc.identifier.scopusid | 2-s2.0-85048039682 | - |
dc.identifier.wosid | 000434340500002 | - |
dc.identifier.bibliographicCitation | Molecular Crystals and Liquid Crystals, v.662, no.1, pp 2 - 8 | - |
dc.citation.title | Molecular Crystals and Liquid Crystals | - |
dc.citation.volume | 662 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 2 | - |
dc.citation.endPage | 8 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordAuthor | Annealing | - |
dc.subject.keywordAuthor | MoS2 | - |
dc.subject.keywordAuthor | thermal evaporation | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.subject.keywordAuthor | two dimensional | - |
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