Characteristics of Amorphous Indium-Zinc-Oxide Thin-Film Transistors Fabricated with a Self-Aligned Coplanar Structure and an NH3 Plasma Contact Doping Process
DC Field | Value | Language |
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dc.contributor.author | Park, Jae Chul | - |
dc.contributor.author | Kim, Dong Jin | - |
dc.contributor.author | Lee, Ho-Nyeon | - |
dc.date.accessioned | 2021-08-11T18:23:56Z | - |
dc.date.available | 2021-08-11T18:23:56Z | - |
dc.date.issued | 2016-02 | - |
dc.identifier.issn | 1947-2935 | - |
dc.identifier.issn | 1947-2943 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/9386 | - |
dc.description.abstract | We report an NH3 plasma contact doping process for amorphous indium-zinc-oxide (a-IZO), which we use to fabricate thin-film transistors (TFTs). By combining a self-aligned coplanar structure with the NH3 plasma doping process, and using an a-IZO active layer with a 9:1 atomic composition of In:Zn, we succeeded in fabricating high-performance a-IZO TFTs, with a field-effect mobility value of 75.5 cm(2) V-1 s(-1) and a sub-threshold slope of 0.18 V/dec. Devices formed with a-IZO active layers with 1:1 ratio of ln:Zn and 9:1 In:Zn resulted in opposite dependences of both the field-effect mobility and the threshold voltage on the ratio of the channel width to length, W/L. This can be explained by considering the difference in the initial charge carrier density of the a-IZO layers, and we find that a high In content is beneficial for fabricating high-performance a-IZO TFTs with long channels. However, a low In-content a-IZO active layer can be used for short channel a-IZO TFTs because the dependence of field-effect mobility on the In content is small for short channel devices. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | American Scientific Publishers | - |
dc.title | Characteristics of Amorphous Indium-Zinc-Oxide Thin-Film Transistors Fabricated with a Self-Aligned Coplanar Structure and an NH3 Plasma Contact Doping Process | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1166/sam.2016.2482 | - |
dc.identifier.scopusid | 2-s2.0-84964833182 | - |
dc.identifier.wosid | 000372945800007 | - |
dc.identifier.bibliographicCitation | Science of Advanced Materials, v.8, no.2, pp 295 - 300 | - |
dc.citation.title | Science of Advanced Materials | - |
dc.citation.volume | 8 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 295 | - |
dc.citation.endPage | 300 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordAuthor | Doping | - |
dc.subject.keywordAuthor | IZO | - |
dc.subject.keywordAuthor | Self-Aligned | - |
dc.subject.keywordAuthor | Thin-Film Transistor | - |
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