Effect of Plasma Induced Surface Damages on the Organic Thin Films by Using Metal Mesh
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ha, Mi-Young | - |
dc.contributor.author | Rao, Mora Veera Madhava | - |
dc.contributor.author | Moon, Dae-Gyu | - |
dc.date.accessioned | 2021-08-11T18:45:44Z | - |
dc.date.available | 2021-08-11T18:45:44Z | - |
dc.date.issued | 2016 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.issn | 2162-8777 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/9916 | - |
dc.description.abstract | In this paper we have investigated the effect of plasma induced damages on the organic small molecular electron transport layers in organic light emitting devices with such electroluminescent materials as tris(8-hydroxyquinolinato) aluminum (Alq(3)) layers was used for studying plasma-induced degradation. We presently use metal mesh that could reduce the influence of plasma exposure of the organic layer films. The photoluminescence, atomic force microscopy, scanning electron microscopy and current-voltage characteristics of electron transport material was measured after exposing to argon plasma. The high-energy species in plasma induces the sputtering of organic layers, quenching of emission sites, and the creation of defect sites in organic layers. In the current-voltage characteristics, negative differential resistance phenomenon was observed corresponding to electron-only device structure of Indium Tin Oxide (ITO)/Alq(3)/LiF/Al. The carrier transport behavior in the electron-only device was described. (C) 2016 The Electrochemical Society. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Electrochemical Society, Inc. | - |
dc.title | Effect of Plasma Induced Surface Damages on the Organic Thin Films by Using Metal Mesh | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1149/2.0051610jss | - |
dc.identifier.scopusid | 2-s2.0-84986208337 | - |
dc.identifier.wosid | 000388868500029 | - |
dc.identifier.bibliographicCitation | ECS Journal of Solid State Science and Technology, v.5, no.10, pp R155 - R159 | - |
dc.citation.title | ECS Journal of Solid State Science and Technology | - |
dc.citation.volume | 5 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | R155 | - |
dc.citation.endPage | R159 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LIGHT-EMITTING DEVICES | - |
dc.subject.keywordPlus | INDIUM TIN OXIDE | - |
dc.subject.keywordPlus | BUFFER LAYER | - |
dc.subject.keywordPlus | AL CATHODE | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordPlus | ELECTRODES | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | ANODE | - |
dc.subject.keywordAuthor | 공학 | - |
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