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Effect of Plasma Induced Surface Damages on the Organic Thin Films by Using Metal Mesh

Authors
Ha, Mi-YoungRao, Mora Veera MadhavaMoon, Dae-Gyu
Issue Date
2016
Publisher
Electrochemical Society, Inc.
Keywords
공학
Citation
ECS Journal of Solid State Science and Technology, v.5, no.10, pp R155 - R159
Journal Title
ECS Journal of Solid State Science and Technology
Volume
5
Number
10
Start Page
R155
End Page
R159
URI
https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/9916
DOI
10.1149/2.0051610jss
ISSN
2162-8769
2162-8777
Abstract
In this paper we have investigated the effect of plasma induced damages on the organic small molecular electron transport layers in organic light emitting devices with such electroluminescent materials as tris(8-hydroxyquinolinato) aluminum (Alq(3)) layers was used for studying plasma-induced degradation. We presently use metal mesh that could reduce the influence of plasma exposure of the organic layer films. The photoluminescence, atomic force microscopy, scanning electron microscopy and current-voltage characteristics of electron transport material was measured after exposing to argon plasma. The high-energy species in plasma induces the sputtering of organic layers, quenching of emission sites, and the creation of defect sites in organic layers. In the current-voltage characteristics, negative differential resistance phenomenon was observed corresponding to electron-only device structure of Indium Tin Oxide (ITO)/Alq(3)/LiF/Al. The carrier transport behavior in the electron-only device was described. (C) 2016 The Electrochemical Society. All rights reserved.
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