Effect of Plasma Induced Surface Damages on the Organic Thin Films by Using Metal Mesh
- Authors
- Ha, Mi-Young; Rao, Mora Veera Madhava; Moon, Dae-Gyu
- Issue Date
- 2016
- Publisher
- Electrochemical Society, Inc.
- Keywords
- 공학
- Citation
- ECS Journal of Solid State Science and Technology, v.5, no.10, pp R155 - R159
- Journal Title
- ECS Journal of Solid State Science and Technology
- Volume
- 5
- Number
- 10
- Start Page
- R155
- End Page
- R159
- URI
- https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/9916
- DOI
- 10.1149/2.0051610jss
- ISSN
- 2162-8769
2162-8777
- Abstract
- In this paper we have investigated the effect of plasma induced damages on the organic small molecular electron transport layers in organic light emitting devices with such electroluminescent materials as tris(8-hydroxyquinolinato) aluminum (Alq(3)) layers was used for studying plasma-induced degradation. We presently use metal mesh that could reduce the influence of plasma exposure of the organic layer films. The photoluminescence, atomic force microscopy, scanning electron microscopy and current-voltage characteristics of electron transport material was measured after exposing to argon plasma. The high-energy species in plasma induces the sputtering of organic layers, quenching of emission sites, and the creation of defect sites in organic layers. In the current-voltage characteristics, negative differential resistance phenomenon was observed corresponding to electron-only device structure of Indium Tin Oxide (ITO)/Alq(3)/LiF/Al. The carrier transport behavior in the electron-only device was described. (C) 2016 The Electrochemical Society. All rights reserved.
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Collections - College of Engineering > Department of Display Materials Engineering > 1. Journal Articles
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