Perovskite-related (CH3NH3)(3)Sb2Br9 for forming-free memristor and low-energy-consuming neuromorphic computing

Abstract

Organic-inorganic halide perovskite materials exhibit excellent memristive properties, such as a high on/off ratio and low switching voltage. However, most studies have focused on Pb-based perovskites. Here, we report on the resistive switching and neuromorphic computing properties of Pb-free perovskite-related MA(3)Sb(2)Br(9) (MA = CH3NH3). The Ag/PMMA/MA(3)Sb(2)Br(9)/ITO devices show forming-free characteristics due to a self-formed conducting filament induced by metallic Sb present in the as-prepared MA(3)Sb(2)Br(9) layer. An MA(3)Sb(2)Br(9)-based memristor exhibits a reliable on/off ratio (approximate to 10(2)), an endurance of 300 cycles, a retention time of approximate to 10(4) s and multilevel storage characteristics. Furthermore, synaptic characteristics, such as short-term potentiation, short-term depression and long-term potentiation, are revealed along with a low energy-consumption of 117.9 fJ m(-2), which indicates that MA(3)Sb(2)Br(9) is a promising material for neuromorphic computing.