Electrical Reliability of Flexible Low-Temperature Polycrystalline Oxide Thin-Film Transistors Under Mechanical Stress

Abstract

devices based on flexible displays have been developed for use in various applications. Upon bending such devices, the applied mechanical force deteriorates the reliability of the devices. Therefore, a high bending reliability that is influenced by tensile and compressive forces that vary depending on the bending radius of curvature must be secured to ensure a reliable device operation. In this study, we investigated the electrical characteristics of flexible low-temperature polycrystalline silicon (LTPS) and amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) on polyimide (PI) substrate and subsequently conducted reliability evaluation of the devices under mechanical stress by applying negative bias temperature illumination stress (NBTIS). The degradations in the electrical properties, such as threshold voltage (Vth) shift, OFF-state current (Ioff), and subthreshold slope (SS), and reliability, increased, and the reliability worsened, as the tensile force increased under decreasing radius of curvature, whereas relatively low degradation occurred under compressive force. A tensile stress-induced increase in grain boundary state density in polycrystalline silicon (poly-Si) and oxygen vacancy in a-IGZO were verified by density of state (DOS) extraction; the cracks occurring due to tensile stress were optically analyzed; the external moisture penetration along the cracks further degrades the device characteristics. This study provides an analysis of device design for ensuring reliability under the application of mechanical stress, thereby contributing to the development of reliable flexible technology.