Synthesis of polycrystalline gallium oxide solar-blind ultraviolet photodetector by Aerosol Deposition
- Authors
- Jang, H.E.[Jang, H.E.]; Cho, H.H.[Cho, H.H.]; Yu, H.K.[Yu, H.K.]; Choi, J.-Y.[Choi, J.-Y.]; Park, J.-H.[Park, J.-H.]
- Issue Date
- Jun-2023
- Publisher
- Elsevier Ltd
- Keywords
- Aerosol deposition; Solar-blind photodetector; UV-C; β-Ga< sub> 2< /sub> O< sub> 3< /sub> thin film
- Citation
- Journal of the European Ceramic Society, v.43, no.6, pp.2534 - 2540
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of the European Ceramic Society
- Volume
- 43
- Number
- 6
- Start Page
- 2534
- End Page
- 2540
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/103464
- DOI
- 10.1016/j.jeurceramsoc.2023.01.040
- ISSN
- 0955-2219
- Abstract
- An aerosol deposition method was used to fabricate a solar-blind photodetector (for UV-C) using thin films of β-Ga2O3, which is a wide-bandgap oxide material. The Ga2O3 films deposited at room temperature presented a polycrystalline structure and a thickness of approximately 4 µm and showed a high transmittance of approximately 70–80 % in the visible region; the transmittance was approximately 60–80 % even after heat treatment up to a 800 °C. The Ga2O3 films that were post-annealed at a temperature of 800 °C showed an Iphoto/Idark ratio of approximately 40,000 in the solar-blind region with a light source of 254 nm, together with very good light detection characteristics (initial rising and decay times of 0.45 s and 0.13 s, respectively). Because of the good performances observed for the Ga2O3 thin films even at extreme conditions, they exhibit a high potential for use as photodetectors in several applications. © 2023 Elsevier Ltd
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