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Improvement of thermal stability of NiAl via employing Al capping layer for advanced interconnect applications
- Issue Date
- 1-Mar-2023
- Publisher
- Institute of Physics
- Keywords
- annealing; electrical resistivity; interconnect; metallization; NiAl
- Citation
- Applied Physics Express, v.16, no.3
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Physics Express
- Volume
- 16
- Number
- 3
- ISSN
- 1882-0778
- Abstract
- This letter reports on the study of employing an Al capping layer to improve the thermal stability of NiAl films for advanced interconnect applications. We prepare NiAl films with an Al capping layer of various thicknesses. Transmission electron microscopy analysis of NiAl with a 1 nm thick capping layer annealed at 450 °C discloses an effective suppression of Al out-diffusion from the NiAl layer and hence enhanced thermal stability. Measurement of thickness-dependent resistivity unravels a much slower resistivity increase for the capping layer sample than that of the sample without capping layer and low resistivity below 10 nm (49.7 μΩ·cm for 3.2 nm). © 2023 The Japan Society of Applied Physics
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Related Researcher
- LEE, HOO JEONG
- Engineering (Advanced Materials Science and Engineering)