Electrical Properties of HfO2 on Si1-xGex Substrates Pretreated Using a Y Precursor with and without Subsequent Oxidant Pulsing
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, W.[Lee, W.] | - |
dc.contributor.author | Lee, J.[Lee, J.] | - |
dc.contributor.author | Eom, D.[Eom, D.] | - |
dc.contributor.author | Oh, J.[Oh, J.] | - |
dc.contributor.author | Park, C.[Park, C.] | - |
dc.contributor.author | Kim, J.[Kim, J.] | - |
dc.contributor.author | Shin, H.[Shin, H.] | - |
dc.contributor.author | Kim, H.[Kim, H.] | - |
dc.date.accessioned | 2023-05-18T12:45:37Z | - |
dc.date.available | 2023-05-18T12:45:37Z | - |
dc.date.created | 2023-05-18 | - |
dc.date.issued | 2023-02-01 | - |
dc.identifier.issn | 2637-6113 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/104649 | - |
dc.description.abstract | We introduced Y-O bonds in the interfacial layer between HfO2 and Si1-xGex (x = 0, 0.15, and 0.3) using two different pretreatment methods to minimize the number of interfacial defects. The pretreatments involved the application of cyclic pulses of Y(CpBut)3 and N2, which proceeded with or without the injection of an oxidizing agent (H2O) at 250 °C, which was the temperature used for the subsequent in situ atomic layer deposition of HfO2. Both Y pretreatments were beneficial in reducing the leakage current and positive flatband voltage shift, which were induced by an increase in the Ge concentration of the substrate. In addition, the interface state density was significantly reduced by the pretreatments, and this effect was more pronounced when the oxidizing agent injection step was skipped. However, both pretreatments increased the capacitance-equivalent oxide thickness, thereby having an adverse effect, possibly owing to a change in the composition of the interfacial layer. © 2023 American Chemical Society | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Chemical Society | - |
dc.title | Electrical Properties of HfO2 on Si1-xGex Substrates Pretreated Using a Y Precursor with and without Subsequent Oxidant Pulsing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, W.[Lee, W.] | - |
dc.contributor.affiliatedAuthor | Lee, J.[Lee, J.] | - |
dc.contributor.affiliatedAuthor | Eom, D.[Eom, D.] | - |
dc.contributor.affiliatedAuthor | Oh, J.[Oh, J.] | - |
dc.contributor.affiliatedAuthor | Park, C.[Park, C.] | - |
dc.contributor.affiliatedAuthor | Kim, J.[Kim, J.] | - |
dc.contributor.affiliatedAuthor | Shin, H.[Shin, H.] | - |
dc.contributor.affiliatedAuthor | Kim, H.[Kim, H.] | - |
dc.identifier.doi | 10.1021/acsaelm.2c01641 | - |
dc.identifier.scopusid | 2-s2.0-85147577838 | - |
dc.identifier.wosid | 000927025500001 | - |
dc.identifier.bibliographicCitation | ACS Applied Electronic Materials, v.5, no.2, pp.1189 - 1195 | - |
dc.relation.isPartOf | ACS Applied Electronic Materials | - |
dc.citation.title | ACS Applied Electronic Materials | - |
dc.citation.volume | 5 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1189 | - |
dc.citation.endPage | 1195 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | Y2O3 THIN-FILMS | - |
dc.subject.keywordPlus | TRAP DENSITY | - |
dc.subject.keywordPlus | OXIDES | - |
dc.subject.keywordPlus | GE | - |
dc.subject.keywordPlus | REDUCTION | - |
dc.subject.keywordAuthor | electrical characteristics | - |
dc.subject.keywordAuthor | HfO< | - |
dc.subject.keywordAuthor | sub> | - |
dc.subject.keywordAuthor | 2< | - |
dc.subject.keywordAuthor | /sub> | - |
dc.subject.keywordAuthor | - | |
dc.subject.keywordAuthor | Si< | - |
dc.subject.keywordAuthor | sub> | - |
dc.subject.keywordAuthor | 1−x< | - |
dc.subject.keywordAuthor | /sub> | - |
dc.subject.keywordAuthor | Ge< | - |
dc.subject.keywordAuthor | sub> | - |
dc.subject.keywordAuthor | x< | - |
dc.subject.keywordAuthor | /sub> | - |
dc.subject.keywordAuthor | - | |
dc.subject.keywordAuthor | surface treatment | - |
dc.subject.keywordAuthor | Y(CpBut)< | - |
dc.subject.keywordAuthor | sub> | - |
dc.subject.keywordAuthor | 3< | - |
dc.subject.keywordAuthor | /sub> | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(03063) 25-2, SUNGKYUNKWAN-RO, JONGNO-GU, SEOUL, KOREAsamsunglib@skku.edu
COPYRIGHT © 2021 SUNGKYUNKWAN UNIVERSITY ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.