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Electron Beam Irradiated Al Doped ZnO Thin Films as Efficient Tunnel Recombination Junction for Hydrogenated Amorphous Silicon/Cu(In, Ga)Se-2 Tandem Solar Cells
- Authors
- Lee, S[Lee, Sunhwa]; Kim, CW[Kim, Chae-Woong]; Lee, YJ[Lee, Youn-Jung]; Park, J[Park, Jinjoo]; Kim, Y[Kim, Youngkuk]; Jeong, C[Jeong, Chaehwan]; Yi, J[Yi, Junsin]
- Issue Date
- Mar-2019
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Electron Beam; Tandem Solar Cells; Tunnel Recombination Junction Layer; Al Doped ZnO; Cu(In,Ga)Se-2; Silicon
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.19, no.3, pp.1480 - 1484
- Indexed
- SCIE
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 19
- Number
- 3
- Start Page
- 1480
- End Page
- 1484
- ISSN
- 1533-4880
- Abstract
- A tunnel recombination junction (TRJ) layer for hydrogenated amorphous silicon (a-Si:H)/Cu(In, Ga)Se-2 (CIGS) tandem solar cells is investigated. An Al-doped zinc oxide (AZO) thin film is applied to the TRJ, and the influence of electron beam (e-beam) irradiation on defects along the TRJ is investigated. The AZO thin films are prepared using radio frequency (RF) sputtering and the e-beam is irradiated at 200 W RF power and 2 keV DC power for 5 min. In the e-beam irradiated AZO thin film, the number of oxygen vacancies and Zn interstitials increases, which in turn strengthens the effect of defect-enhanced tunnel recombination.
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Related Researcher
- YI, JUN SIN
- Information and Communication Engineering (Electronic and Electrical Engineering)