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Innovating Process in Heterojunction Back Contact Silicon Solar Cells Using Shadow Metal Masks

Authors
Lee, YoungseokOh, DonghyunPark, Hyeong GiYi, Junsin
Issue Date
30-Apr-2024
Publisher
Korean Institute of Electrical and Electronic Material Engineers
Keywords
Back contact; Carrier transport; Fill factor; Heterojunction; Silicon solar cells
Citation
Transactions on Electrical and Electronic Materials
Indexed
SCOPUS
ESCI
KCI
Journal Title
Transactions on Electrical and Electronic Materials
URI
https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/110832
DOI
10.1007/s42341-024-00540-5
ISSN
1229-7607
2092-7592
Abstract
We present a very simple process to fabricate silicon heterojunction back contact (HBC) solar cell. This process can easily form a backside structure using in situ masks without particular patterning process. Based on our silicon heterojunction (SHJ) solar cell process conditions, we optimize the process for HBC solar cell. The intrinsic a-Si: H layer and p-type a-Si: H layer process conditions were adjusted to improve to FF and efficiency. Applying these adjust, we obtained 18.1% efficiency of the HBC solar cell with VOC of 684 mV, JSC of 38.3 mA/cm2, FF of 69.1%. The key factors affecting FF and performance of the HBC solar cell are also discussed. © The Korean Institute of Electrical and Electronic Material Engineers 2024.
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