Interfacial energy-band engineering for high open-circuit voltage of rear emitter p-type crystalline silicon solar cells
- Authors
- Khokhar, Muhammad Quddamah; Lee, Youngseok; Seo, Seyoung; Kim, Eunsik; Ko, Seonkyung; Yousuf, Hasnain; Chu, Mengmeng; Ur Rahman, Rafi; Nur Aida, Maha; Pham, Duy Phong; Yi, Junsin
- Issue Date
- 15-May-2024
- Publisher
- Elsevier Ltd
- Keywords
- Energy band engineering; Poly-Si passivating contacts; Rear emitter P-type crystalline silicon; TOPCon solar cells
- Citation
- Solar Energy, v.274
- Indexed
- SCIE
SCOPUS
- Journal Title
- Solar Energy
- Volume
- 274
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/111320
- DOI
- 10.1016/j.solener.2024.112591
- ISSN
- 0038-092X
1471-1257
- Abstract
- Rear emitter p-type crystalline silicon (c-Si) tunnel oxide passivating contact (P-TOPCon) devices with low-resistivity (≤1 Ω.cm) c-Si wafer and high-conductivity phosphorus doped (n-type) polysilicon passivating contact (n-poly-Si PC) are expected to achieve high built-in potential (Vbi) and thus open-circuit voltage (Voc). However, the results indicate that the high conductivity of n-poly-Si PC considerably deteriorates the interface passivation quality and lowers the device's Voc. A crucial factor to consider is that the hole and electron can tunnel and recombine together at the c-Si/n-poly-Si PC contact, resulting in a decrease in the quality of interfacial passivation. To inhibit carrier tunnel diffusion and enable energy band engineering at the interface for achieving high Voc, a thin intrinsic poly-Si buffer layer (10 nm) is inserted between SiO2 and n-poly-Si PC. When compared to a device without a buffer, a device with the buffer exhibits a significant improvement in passivation quality and hence Voc. The device with buffer has a Voc of 705 mV and an efficiency of 23.5 %, while that without buffer is 681 mV and 22.6 %, respectively. The introduced buffer has little effect on the industrial manufacturing process, but it does significantly enhance Voc. It has the potential to improve the efficiency of the P-TOPCon devices. © 2024 International Solar Energy Society
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