Investigation of boron-doped hydrogenated silicon films as a thermo-sensing layer for uncooled microbolometer
- Authors
- Shin, C.[Shin, C.]; Pham, D.P.[Pham, D.P.]; Park, J.[Park, J.]; Lee, Y.-J.[Lee, Y.-J.]; Kim, S.[Kim, S.]; Yi, J.[Yi, J.]
- Issue Date
- 30-Nov-2019
- Publisher
- Elsevier B.V.
- Keywords
- Boron-doped hydrogenated silicon films; Mixed-phase; Thermo-sensing layer; Uncooled microbolometer
- Citation
- Thin Solid Films, v.690
- Indexed
- SCIE
SCOPUS
- Journal Title
- Thin Solid Films
- Volume
- 690
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/14005
- DOI
- 10.1016/j.tsf.2019.137515
- ISSN
- 0040-6090
- Abstract
- Boron-doped hydrogenated silicon films are used in thermo-sensing layer in infrared detectors or uncooled microbolometers. Among thermo-sensing materials such as vanadium oxide and amorphous silicon and silicon diodes, amorphous silicon is the most common. Parameters such as the temperature coefficient of resistance (TCR), sheet resistance and 1/f noise are very important for the performance of these devices. One thermo-sensing material in particular, boron-doped hydrogenated silicon (BSi:H), has satisfactory TCR, sheet resistance (Rsheet), and 1/f noise values. The BSi:H films are deposited using radio frequency plasma-enhanced chemical vapor deposition. The dependence of electrical, structural, and chemical properties of the BSi:H films on the plasma parameters is reported. The TCR of the films is 1.0–2.9%/K, Rsheet is 1.2–37.8 MΩ/Υ and crystalline volume fraction is 10.2–68.5%. The properties of the amorphous and mixed-phase are compared. It is found that the 1/f noise of the mixed-phase film is lower than that of the amorphous phase film. These results show that the boron doped mixed-phase silicon films are suitable for use as thermo-sensing layers. © 2019
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- Appears in
Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
- Graduate School > Energy Science > 1. Journal Articles
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