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A study on Improvement of Electrical and Retention characteristics of Non-volatile Memory with Al2O3 Insulator
- Authors
- Yoon, G.[Yoon, G.]; Kim, J.[Kim, J.]; Shin, D.[Shin, D.]; Mallem, K.[Mallem, K.]; Park, J.[Park, J.]; Kim, J.[Kim, J.]; Cho, J.[Cho, J.]; Bae, S.[Bae, S.]; Kim, J.[Kim, J.]; Kim, H.-H.[Kim, H.-H.]; Yi, J.[Yi, J.]
- Issue Date
- 2019
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings
- Journal Title
- AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings
- ISSN
- 0000-0000
- Abstract
- We report the controllable charge (Electron/hole) trapping window layer properties of atomic layer deposited (ALD) aluminum oxide (Al2O3) gate dielectric layer on the Si substrate. Electron/hole blocking mechanism was archived by controlling the Al2O3 composition, band gap and post deposition annealing affect, respectively. The chemical composition of the Al2O3 was confirmed from the X-ray photoelectron spectroscopy analysis. The capacitance-voltage (C-V) characteristic of Al/Al2O3/Si (MOS) metal-oxide-semiconductor structure showed clear accumulation, depletion and inversion regions as-compared with the Al/SiNx/Si MOS devices, respectively, From the C-V curves, the flat band voltage(ΔFB) was shifted accordingly positive and negative with respect to electron/hole trapping effect. In addition, 10 nm AlOx storage layer and SiNx storage layer were compared in the same structure. The 10 nm SiNx storage layer showed a very low retention of 55.1% and the memory window also showed a relatively low value of 2.72V at 18V. © 2019 FTFMD.
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Related Researcher
- YI, JUN SIN
- Information and Communication Engineering (Electronic and Electrical Engineering)